Electrical behavior of ultra - thin body silicon - on - insulator n - MOSFETs at a high operating temperature
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چکیده
منابع مشابه
Nano Scale Single and Double Gate SOI MOSFETs Structures and Compression of Electrical Performance Factors
With the scaling of MOSFETs in to sub-100nm regim, Silicon – on – Insulator (SOI), single gate (SG) and double gate (DG) MOSFETs are expected to replace tradional bulk MOSFETS. These novel MOSFETs devices will be strong contenders in RF applications in wireless communication market. This work is concerned about the device scaling and different design structures of nano scale SOI MOSFETs. The co...
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The combination of channel mobility enhancement techniques such as strain engineering, with non-classical MOS device architectures, such as ultra-thin body or multiple-gate structures, offers the promise of maximizing current drive while maintaining the electrostatic control required for aggressive device scaling in future CMOS technology nodes. Two structures that combine strain engineering an...
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An accelerated wear-out of ultra-thin gate oxides used in contemporary deep-submicron CMOS technologies is one of the effects observed in MOSFETs submitted to irradiation with high LET particles [1-5]. The damage introduced in the gate oxide by an impinging ion may in fact act as a seed for further degradation produced by electrons and holes injected at high fields during a subsequent electrica...
متن کاملThe effects of strain on carrier transport in thin and ultra-thin SOI MOSFETs
Thin-body MOSFET geometries such as fully-depleted SO1 and double-gate devices are attractive because they can offer superior scaling properties compared to bulk and thick-body SO1 devices. The electrostatics of a MOSFET limit how short of a gate length can be achieved before the gate loses control over the channel. In bulk-like devices, the device designer keeps the gate in control with gate o...
متن کاملElectrical Characterization of sub-30nm Gatelength SOI MOSFETs
Demonstrations of sub 20nm gate length MOSFET devices involving various FEOL (front end of line) schemes such as Silicon On DEpletion Layer (SODEL) FET’s, asymmetricgate FinFET devices, planar Ultra-thin body SOI (UTSOI) FET’s, and, more recently, independently oriented surface channels for (110) pMOS and (100) nMOS described as Simplified Hybrid Orientation Technology (SHOT).[1-4, 718] have be...
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